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SS1200 Datasheet Preview

SS1200 Datasheet

1.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE

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®
WON-TOP ELECTRONICS
SS1150 – SS1200
1.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE
Pb
Features
Low Forward Voltage
Epitaxial Construction with Oxide Passivation
Guard Ring for Transient and ESD Protection
Surge Overload Rating to 30A Peak
Low Power Loss
A
Fast Switching
Ideally Suited for Use in High Frequency
SMPS, Inverters and As Free Wheeling Diodes
C
B
F
HG
E
D
Mechanical Data
Case: SMA/DO-214AC, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Device Code, See Page 3
Weight: 0.064 grams (approx.)
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
SMA/DO-214AC
Dim Min Max
A 2.29 2.92
B 4.00 4.60
C 1.27 1.90
D
0.152
0.305
E 4.80 5.30
F 2.00 2.44
G
0.051
0.203
H 0.76 1.52
All Dimensions in mm
Maximum Ratings @TA=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
Forward Voltage
@IF = 1.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@TJ = 25°C
@TJ = 100°C
Typical Junction Capacitance (Note 2)
Thermal Resistance, Junction to Ambient (Note 1)
Thermal Resistance, Junction to Lead (Note 1)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
CJ
R JA
R JL
TJ, TSTG
Note: 1. Mounted on FR-4 PCB with 5.0 x 5.0mm copper pads.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SS1150
SS1200
150 200
105 140
1.0
30
0.9
0.2
2.0
35
88
28
-55 to +150
Unit
V
V
A
A
V
mA
pF
°C/W
°C
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1




WON-TOP

SS1200 Datasheet Preview

SS1200 Datasheet

1.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE

No Preview Available !

SS1150 – SS1200
1.0
0.8
0.6
0.4
0.2
Resistive or
Inductive Load
0
0 15 30 45 60 75 90 105 120 135 150
TL, LEAD TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
40
Single Half-Sine-Wave
JEDEC Method
30
20
10
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
50
40
®
10
Pulse Width = 300µs
1% Duty Cycle
WON-TOP ELECTRONICS
1.0
TA = 125°C
TA = 75°C
0.1
TA = 25°C
0.01
0
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
10000
1000
100
10
TJ = 125°C
TJ = 75°C
1.0
TJ = 25°C
0.1
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
f = 1MHz
30
20
10
www.wontop.com
2
0
1
10 100
VR, DC REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
1000
© Won-Top Electronics Co., Ltd.
Revision: September, 2012


Part Number SS1200
Description 1.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE
Maker WON-TOP
Total Page 4 Pages
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