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LD01N60 - Power FET

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Datasheet Details

Part number LD01N60
Manufacturer Wanlida
File Size 319.66 KB
Description Power FET
Datasheet download datasheet LD01N60 Datasheet

General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers a drain-to-source diode with a fast recovery time.

Overview

www.DataSheet4U.com LD01N60 POWER FIELD EFFECT TRANSISTOR.

Key Features

  • ‹ ‹ ‹ ‹ ‹ Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature.

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