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ACTT4X-800C Datasheet Preview

ACTT4X-800C Datasheet

AC Thyristor Triac power switch

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ACTT4X-800C
AC Thyristor Triac power switch
Rev.02 - 06 September 2019
Product data sheet
1. General description
Planar passivated AC Thyristor Triac power switch in a SOT186A (TO-220F) "full pack" plastic
package with self-protective capabilities against low and high energy transients.
2. Features and benefits
Clamping structure ensuring safe high over-voltage withstand capability
Direct interfacing with low power drivers and microcontrollers
Full cycle AC conduction
Isolated mounting base package
Less sensitive gate for high noise immunity
Over-voltage withstand capability to IEC 61000-4-5
Pin compatible with standard triacs
Planar passivated for voltage ruggedness and reliability
Safe clamping capability for low energy over-voltage transients
Self-protective turn-on during high energy voltage transients
Triggering in three quadrants only
Very high immunity to false turn-on by dV/dt
3. Applications
AC fan, pump and compressor controls
Highly inductive, resistive and safety loads
Large and small appliances (White Goods)
Reversing induction motor controls
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Th ≤ 94 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj
junction temperature
VPP
peak pulse voltage
Tj = 25 °C; non-repetitive, off-state;
Fig. 6
Min Typ Max Unit
-
-
800 V
-
-
4
A
-
-
35
A
-
-
39
A
-
-
125 °C
-
-
2
kV




WeEn

ACTT4X-800C Datasheet Preview

ACTT4X-800C Datasheet

AC Thyristor Triac power switch

No Preview Available !

WeEn Semiconductors
ACTT4X-800C
AC Thyristor Triac power switch
Symbol
Parameter
Static characteristics
IGT
gate trigger current
IH
holding current
VT
on-state voltage
VCL
clamping voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 100 mA; LD+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; Tj = 25 °C; Fig. 10
IT = 6 A; Tj = 25 °C; Fig. 11
ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 13
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit; Fig. 14;
Fig. 15
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 10 V/µs; gate open circuit;
Fig. 15; Fig. 16
VD = 400 V; Tj = 125 °C; IT(RMS) = 4 A;
dVcom/dt = 1 V/µs; gate open circuit;
Fig. 14; Fig. 15
Min Typ Max Unit
-
-
-
-
-
-
-
-
-
-
850 -
35
mA
35
mA
35
mA
35
mA
1.7 V
-
V
1000 -
-
V/µs
8
-
-
A/ms
10
-
-
A/ms
15
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
CM
common
2
LD
load
3
G
gate
mb
n.c.
mounting base; isolated
Simplified outline
mb
Graphic symbol
LD
G
CM
003aaf296
1 23
TO-220F (SOT186A)
ACTT4X-800C
Product data sheet
All information provided in this document is subject to legal disclaimers.
06 September 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
2 / 14


Part Number ACTT4X-800C
Description AC Thyristor Triac power switch
Maker WeEn
Total Page 3 Pages
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