BT151-500C
SCR
22 February 2018
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use
in applications requiring good bidirectional blocking voltage capability and high thermal cycling
performance.
2. Features and benefits
• Good bidirectional blocking voltage capability
• High thermal cycling performance
3. Applications
• Ignition circuits
• Motor control
• Protection circuits
• Voltage regulation
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
VRRM
repetitive peak reverse
voltage
ITSM
Tj
IT(AV)
non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
state current
tp = 10 ms; Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms
junction temperature
average on-state
current
half sine wave; Tmb ≤ 109 °C; Fig. 1
IT(RMS)
RMS on-state current half sine wave; Tmb ≤ 109 °C; Fig. 2;
Fig. 3
Static characteristics
IGT gate trigger current
Dynamic characteristics
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7
dVD/dt
rate of rise of off-state
voltage
VDM = 335 V; Tj = 125 °C; RGK = 100 Ω;
(VDM = 67% of VDRM); expoential
waveform; Fig. 12
Min Typ Max Unit
- - 500 V
- - 500 V
- - 100 A
- - 110 A
- - 125 °C
- - 7.5 A
- - 12 A
- 2 15 mA
200 1000 -
V/µs
