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BT258X-600R Datasheet Preview

BT258X-600R Datasheet

Thyristor

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DISCRETE SEMICONDUCTORS
DATA SHEET
BT258X series
Thyristors
logic level
Product specification
September 2018




WeEn

BT258X-600R Datasheet Preview

BT258X-600R Datasheet

Thyristor

No Preview Available !

WeEn Semiconductors
Thyristors
logic level
Product specification
BT258X series
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors
in a full pack, plastic envelope,
intended for use in general purpose
switching and phase control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM,
VRRM
IT(AV)
IT(RMS)
ITSM
BT258X- 500R 600R 800R
Repetitive peak off-state
500 600 800 V
voltages
Average on-state current
5
5
5
A
RMS on-state current
8
8
8
A
Non-repetitive peak on-state 75 75 75 A
current
PINNING - SOT186A
PIN
DESCRIPTION
1 cathode
2 anode
3 gate
case isolated
PIN CONFIGURATION
mb
1 23
TO-220F (SOT186A)
SYMBOL
A
K
G
sym037
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
-
voltages
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VRGM
PGM
PG(AV)
Tstg
Tj
Average on-state current half sine wave; Ths 90 ˚C
-
RMS on-state current
all conduction angles
-
Non-repetitive peak
on-state current
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
-
t = 8.3 ms
-
I2t for fusing
t = 10 ms
-
Repetitive rate of rise of ITM = 10 A; IG = 50 mA;
-
on-state current after
dIG/dt = 50 mA/µs
triggering
Peak gate current
-
Peak reverse gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
MAX.
-500R -600R -800R
5001 6001 800
5
8
75
82
28
50
2
5
5
0.5
150
1252
UNIT
V
A
A
A
A
A2s
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kor less.
September 2018
1
Rev 2.100



Part Number BT258X-600R
Description Thyristor
Maker WeEn
Total Page 3 Pages
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BT258X-600R Datasheet PDF





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