BT258X-600R
DESCRIPTION
Passivated, sensitive gate thyristors in a full pack, plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM, VRRM IT(AV) IT(RMS) ITSM
BT258X- 500R 600R 800R
Repetitive peak off-state
500 600 800 V voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state 75 75 75 A current
PINNING
- SOT186A
DESCRIPTION
1 cathode
2 anode
3 gate case isolated
PIN CONFIGURATION mb
1 23
TO-220F (SOT186A)
SYMBOL
G sym037
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VDRM, VRRM Repetitive peak off-state
- voltages
IT(AV) IT(RMS) ITSM
I2t d IT/dt IGM VRGM PGM PG(AV) Tstg Tj
Average...
