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BTA225-800B Datasheet Preview

BTA225-800B Datasheet

3Q Hi-Com Triac

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BTA225-800B
3Q Hi-Com Triac
Rev.02 - 24 October 2019
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a TO220 plastic package intended for
use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will
commutate the full rated RMS current at the maximum rated junction temperature without the aid of
a snubber.
2. Features and benefits
3Q technology for improved noise immunity
High blocking voltage capability
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Heating controls
High power motor control
High power switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 91 °C;
Fig. 1; Fig. 2; Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
Tj
junction temperature
Symbol Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
800 V
-
-
25 A
-
-
190 A
-
209 A
-
-
125 °C
Min Typ Max Unit
2
18
50
mA
2
21
50
mA
2
34
50
mA




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BTA225-800B Datasheet Preview

BTA225-800B Datasheet

3Q Hi-Com Triac

No Preview Available !

WeEn Semiconductors
Symbol Parameter
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt rate of change of
commutating current
Conditions
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 30 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 25 A;
dVcom/dt = 20 V/μs; (without snubber
condition); gate open circuit; Fig. 12
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
Simplified outline
mb
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main terminal 2
BTA225-800B
3Q Hi-Com Triac
Min Typ Max Unit
-
31
60
mA
-
1.3 1.55 V
1000 4000 -
V/μs
-
44
-
A/ms
Graphic symbol
T2
T1
G
sym051
123
6. Ordering information
Table 3. Ordering information
Type number
Package Orderable part number
Name
BTA225-800B
TO220 BTA225-800B, 127
Packing
method
Tube
Small packing Package
quantity
version
50
SOT78
Package
issue date
13-Jun-2008
BTA225-800B
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 October 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
2 / 13


Part Number BTA225-800B
Description 3Q Hi-Com Triac
Maker WeEn
Total Page 3 Pages
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