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BTA316B-600E Datasheet Preview

BTA316B-600E Datasheet

3Q Hi-Com Triac

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BTA316B-600E
3Q Hi-Com Triac
20 August 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT404 plastic package. This "series
E" triac balances the requirements of commutation performance and gate sensitivity. The "sensitive
gate" "series E" is intended for interfacing with low power drivers including microcontrollers.
2. Features and benefits
3Q technology for improved noise immunity
Direct interfacing with low power drivers and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
3. Applications
Electronic thermostats (heating and cooling)
High power motor controls e.g. washing machines and vacuum cleaners
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 101 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 16 A
- - 140 A
- - 150 A
- - 125 °C
- - 10 mA
- - 10 mA




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BTA316B-600E Datasheet Preview

BTA316B-600E Datasheet

3Q Hi-Com Triac

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WeEn Semiconductors
BTA316B-600E
3Q Hi-Com Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 18 A; Tj = 25 °C; Fig. 10
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A;
dVcom/dt = 10 V/µs; gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A;
dVcom/dt = 1 V/µs; gate open circuit
Min Typ Max Unit
- - 10 mA
- - 15 mA
- 1.3 1.5 V
50 - - V/µs
3 - - A/ms
6 - - A/ms
10 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
2
13
D2PAK (SOT404)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA316B-600E
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3
leads (one lead cropped)
Version
SOT404
BTA316B-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 August 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 13


Part Number BTA316B-600E
Description 3Q Hi-Com Triac
Maker WeEn
Total Page 13 Pages
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