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BTA330B-800CT Datasheet Preview

BTA330B-800CT Datasheet

3Q Hi-Com Triac

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BTA330B-800CT
3Q Hi-Com Triac
Rev.01 - 16 October 2019
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable
plastic package intended for use in circuits where high static and dynamic dV/dt and high dIT/dt can
occur. This triac will commutate the full RMS current at the maximum rated junction temperature
(Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where high junction operating
temperature capability is required.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High junction operating temperature capability (Tj(max) = 150 °C)
High voltage capability
High current capability
Less sensitive gate for highest noise immunity
Triggering in three quadrants only
Very high immunity to false turn-on by dV/dt and fast transients
Surface mountable plastic package
Package is RoHS compliant
3. Applications
Heating controls
High power motor control
High power switching
Applications subject to high temperature (Tj(max) = 150 °C)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDRM
IT(RMS)
ITSM
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
full sine wave; Tmb ≤ 120 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
Tj
junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
800 V
-
-
30 A
-
-
270 A
-
-
297 A
-
-
150 °C
-
-
35 mA




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BTA330B-800CT Datasheet Preview

BTA330B-800CT Datasheet

3Q Hi-Com Triac

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WeEn Semiconductors
BTA330B-800CT
3Q Hi-Com Triac
Symbol Parameter
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 42 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 30 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 30 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
Simplified outline
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main terminal 2
2
1
3
Min Typ Max Unit
-
-
35
mA
-
-
35
mA
-
-
50
mA
-
1.2 1.5 V
2000 -
-
V/μs
1000 -
-
V/μs
16 -
-
A/ms
13 -
-
A/ms
Graphic symbol
T2
T1
G
sym051
6. Ordering information
Table 3. Ordering information
Type number
Package Orderable part number
Name
BTA330B-800CT TO263 BTA330B-800CTJ
Packing
method
Reel
Small packing
quantity
800
Package
version
TO263E
Package
issue date
26-May-2017
7. Marking
Table 4. Marking codes
Type number
BTA330B-800CT
Marking codes
BTA330B-800CT
BTA330B-800CT
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 October 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
2 / 12


Part Number BTA330B-800CT
Description 3Q Hi-Com Triac
Maker WeEn
Total Page 3 Pages
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