900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






WeEn

BTA425X-800BT Datasheet Preview

BTA425X-800BT Datasheet

3Q Hi-ComTriac

No Preview Available !

BTA425X-800BT
3Q Hi-Com Triac
12 September 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack"
plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can
occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction
temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high
junction operating temperature capability" is required.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
Isolated mounting base package
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Applications subject to high temperature
Heating controls
High power motor control
High power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Th ≤ 63 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj junction temperature
Static characteristics
Min Typ Max Unit
- - 800 V
- - 25 A
- - 250 A
- - 275 A
- - 150 °C




WeEn

BTA425X-800BT Datasheet Preview

BTA425X-800BT Datasheet

3Q Hi-ComTriac

No Preview Available !

WeEn Semiconductors
BTA425X-800BT
3Q Hi-Com Triac
Symbol
IGT
Parameter
gate trigger current
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 35 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 25 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit
Min Typ Max Unit
- - 50 mA
- - 50 mA
- - 50 mA
- - 75 mA
- 1.2 1.5 V
2000 - - V/µs
15 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 23
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA425X-800BT
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
BTA425X-800BT
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 13


Part Number BTA425X-800BT
Description 3Q Hi-ComTriac
Maker WeEn
Total Page 13 Pages
PDF Download

BTA425X-800BT Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BTA425X-800B 3Q Hi-ComTriac
WeEn
2 BTA425X-800B 3Q Hi-Com Triac
NXP
3 BTA425X-800BT 3Q Hi-Com Triac
NXP
4 BTA425X-800BT 3Q Hi-ComTriac
WeEn





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy