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NXPSC12650 - Silicon Carbide Diode

General Description

2.

Key Features

  • Highly stable switching performance.
  • High forward surge capability IFSM.
  • Extremely fast reverse recovery time.
  • Superior in efficiency to Silicon Diode alternatives.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant 3.

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Datasheet Details

Part number NXPSC12650
Manufacturer WeEn
File Size 195.42 KB
Description Silicon Carbide Diode
Datasheet download datasheet NXPSC12650 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NXPSC12650 Silicon Carbide Diode 31 August 2018 Product data sheet 1. General description Silicon Carbide Schottky diode in a SOD59A(TO-220AC) plastic package, designed for high frequency switched-mode power supplies 2. Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant 3. Applications • Power factor correction • Telecom / Server SMPS • UPS • PV inverter • PC Silverbox • LED / OLED TV • Motor Drives 4. Quick reference data Table 1.