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PHE13003C Datasheet Preview

PHE13003C Datasheet

NPN power transistor

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PHE13003C
NPN power transistor
13 October 2016
Product data sheet
1. General description
High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)
plastic package.
2. Features and benefits
Fast switching
High typical DC current gain
High voltage capability of 700 V
Very low switching and conduction losses
3. Applications
Compact fluorescent lamps (CFL)
Low power electronic lighting ballasts
Off-line self-oscillating power supplies (SOPS) for battery charging
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
IC
collector current
DC
Ptot
total power dissipation Tlead ≤ 25 °C; Fig. 1
VCESM
collector-emitter peak VBE = 0 V
voltage
Static characteristics
hFE
DC current gain
IC = 0.5 A; VCE = 2 V; Tlead = 25 °C
IC = 1 A; VCE = 2 V; Tlead = 25 °C
Min Typ Max Unit
-
-
1.5 A
-
-
2.1 W
-
-
700 V
8
17
25
5
9
15




WeEn

PHE13003C Datasheet Preview

PHE13003C Datasheet

NPN power transistor

No Preview Available !

WeEn Semiconductors
PHE13003C
NPN power transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
B
base
2
C
collector
3
E
emitter
Simplified outline
321
TO-92 (SOT54)
Graphic symbol
C
B
E
sym123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PHE13003C
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
PHE13003C
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 October 2016
© WeEn Semiconductors Co., Ltd. 2016. All rights reserved
2 / 11


Part Number PHE13003C
Description NPN power transistor
Maker WeEn
Total Page 3 Pages
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