TYN20-600T Datasheet | WeEn

description Planar passivated Silicon Controlled Rectifier (SCR) in TO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C). 2. Features and benefits - High junction operating temperature capability (Tj(max) = 150 °C) - High bidirectional blocking voltage capability - Very high current surge capability - High thermal cycling performance - Planar passivated for voltage ruggedness and reliability 3. Applications - Protection circuit in Power Supplies for Consumer / Industrial / Medical Equipment - Capacitive Discharge Ignition (CDI) - Crowbar protection - Inrush protection - Motor control - Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak on- state current Tj junction temperature Conditions half sine wave; Tmb ≤ 135 °C; Fig. 1; Fig. 2; Fig. 3 half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Values Unit °C We En Semiconductors Symbol Parameter Static characteristics IGT gate trigger current IH holding current VT on-state voltage Dynamic characteristics d VD/dt rate of rise of off-state voltage Conditions VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 VD = 12 V; Tj = 25 °C; Fig. 9 IT = 32 A; Tj = 25 °C; Fig. 10 VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open...