| Title | |
| Description | Silicon Carbide Schottky diode (Bare Die). 2. Features and benefits • Extremely fast reverse recovery time • Low figure of merit (Qr*VF) • Highly stable switching performance • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant 3. Quick reference data Table 1. Quick reference data Symbol Parame... |
| Features |
and benefits
• Extremely fast reverse recovery time • Low figure of merit (Qr*VF) • Highly stable switching performance • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant 3. Quick reference data Table 1. Quick reference data Symbol Parameter ... |
| Datasheet |
 WB10SC120AL Datasheet - 248.32KB |
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