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WB10SC120AL - Silicon Carbide Schottky diode

Description

Silicon Carbide Schottky diode (Bare Die).

2.

Features

  • Extremely fast reverse recovery time.
  • Low figure of merit (Qr.
  • VF).
  • Highly stable switching performance.
  • Superior in efficiency to Silicon Diode alternatives.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM.
  • repetitive peak reverse voltage IF(AV).
  • average forward curren.

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Datasheet Details

Part number WB10SC120AL
Manufacturer WeEn
File Size 248.32 KB
Description Silicon Carbide Schottky diode
Datasheet download datasheet WB10SC120AL Datasheet
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WB10SC120AL Silicon Carbide Schottky diode - Bare die Rev.01 - 26 October 2021 Product data sheet 1. General description Silicon Carbide Schottky diode (Bare Die). 2. Features and benefits • Extremely fast reverse recovery time • Low figure of merit (Qr*VF) • Highly stable switching performance • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM* repetitive peak reverse voltage IF(AV)** average forward current δ = 0.
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