Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
P b Lead(Pb)-Free
A
MCR100-6/MCR100-8
SCRs
0.8 A RMS
400/600 Voltage
G
C
Maximum Ratings (TA=25°C unless otherwise noted)
Rating
Symbol
MCR100-6
Repetitive Peak Off-stage Voltage
VDRM
400
Collector-Base Voltage
ITRMS
1.Cathode
2.Gate
3.Anode
1
23
TO-92
MCR100-8
600
0.8
Junction Temperature Range
TJ
+150
Storage Temperature Range
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS
Characteristics
On State Voltage(1)
ITM = 1A
Gate Trigger Voltage
VAK = 7V
Peak Repetitve Forward and Reverse Blocking Voltage
IDRM = 10μA , VMAX = 10V
MCR100-6
MCR100-8
Peak Forward or Reverse Blocking Current
VAK = Rated, VDRM or VRRM
Symbol
VTM
VGT
VDRM, VRRM
IDRM, IRRM
Holding Current
IHL = 20mA, AV = 7V
IH
Gate Trigger Current
VAK = 7V
A2
IGT
A1
A
B
Note 1. Forward current applied for 1 ms maximum duration, duty cycle ≤ 1%
Min
-
-
400
600
-
-
5
15
30
80
Max
1.7
0.8
-
10
5
15
30
80
200
Unit
V
A
°C
°C
Unit
V
V
V
μA
mA
μA
WEITRON
http://www.weitron.com.tw
1/2 30-Jan-07
Free Datasheet http://www.datasheet4u.com/
