2N4003K - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

Gate Pretection Diode SOURCE 2 DRAIN.

Weitron Technology

📥 Download Datasheet

Datasheet Details

Part number	2N4003K
Manufacturer	Weitron Technology
File Size	1.05 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	2N4003K Datasheet
Additional preview pages of the 2N4003K datasheet.

📁 Similar Datasheet

2N4003 - PNP Epitaxial Silicon Transistor (SEMTECH)
2N4003NLT1 - Small Signal MOSFET (WILLAS)
2N4000 - Bipolar NPN Device (Seme LAB)
2N4001 - Bipolar NPN Device (Seme LAB)
2N4002 - PNP Epitaxial Silicon Transistor (SEMTECH)
2N4006 - (2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor (Crystalonics)
2N4007 - (2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor (Crystalonics)
2N4008 - (2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor (Crystalonics)
2N4009 - (2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor (Crystalonics)
2N40 - N-Channel MOSFET (ART CHIP)

Other Datasheets by Weitron Technology

Full PDF Text Transcription

Click to expand full text

www.DataSheet.co.kr 2N4003K N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN * * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V. Features: * Gate Pretection Diode SOURCE 2 DRAIN CURRENT 0.5 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE 3 1 2 Application: * Level Shifters * Level Switches * Low Side Load Switches * Portable Applications SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 ,Steady State Unless Otherwise Specified) Symbol V DS VG S Value 30 ±20 0.5 0.37 0.69 0.56 0.40 0.83 1.7 180 150 300 +150 -55~+150 1.

Published: Sep 28, 2011 |