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2N4003K Datasheet Preview

2N4003K Datasheet

N-Channel Enhancement Mode Power MOSFET

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2N4003K
N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
1
GATE
*
3 DRAIN
* Gate
Features:
* Low Gate Voltage Threshold Vgs(th)
Pretection
Diode
to Facilitate Drive Circuit Design.
* Low Gate Charge for Fast Switching.
* ESD Protected Gate.
* Minimum Breakdown Voltage Rating of 30V.
SOURCE 2
Application:
* Level Shifters
* Level Switches
* Low Side Load Switches
* Portable Applications
DRAIN CURRENT
0.5 AMPERES
DRAIN SOUCE VOLTAGE
30 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Drain-Source Voltage
Rating
Gate-Source Voltage
Continuous Drain Current1 ,Steady State
Power Dissipation1
,Steady State
Continuous Drain Current1 ,t<10s
Power Dissipation1
,t<5s
(TA=25°C)
(TA=85°C)
(TA=25°C)
(TA=85°C)
Pulsed Drain Current
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
Value
30
±20
0.5
0.37
0.69
0.56
0.40
0.83
1.7
Maximum Junction-ambient
Operating Junction Temperature Range
Storage Temperature Range
,Steady State1
,t<10s1
,Steady State2
180
RθJA
150
300
TJ +150
Tstg -55~+150
Source Current (Body Diode)
I S 1.0
Lead Temperature for Soldering Purposes (1/8” from case 10s)
TL 260
Note: 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Unit
V
A
W
A
W
A
°C /W
°C
°C
A
°C
Device Marking
2N4003K = TR8
WEITRON
http://www.weitron.com.tw
1/6
08-Sep-09
Datasheet pdf - http://www.DataSheet4U.net/




Weitron Technology

2N4003K Datasheet Preview

2N4003K Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

www.DataSheet.co.kr
2N4003K
Electrical Characteristics(TA=25°C Unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
VGS =0, ID =100 A
Gate-Source Threshold Voltage3
VDS =VGS , ID=250 A
Gate-Source Leakage Current
VGS = ± 10V
Zero Gate Voltage Drain Current (TJ =25˚C)
VDS =30V,VGS =0
Drain-Source On-Resistance3
VGS =2.5V,ID= 10mA
VGS =4.0V,ID=10mA
Forward Transconductance3
VDS =3.0V, ID=10mA
V(BR)DSS
30
VG S(Th)
0.8
IGSS -
IDSS -
RDS(on)
gfs
-
-
-
--
- 1.6
- ±1.0
-1
1.5 2.0
1.0 1.5
0.33 -
V
Ω
S
Dynamic
Input Capacitance
VGS=0V, VDS=5.0V, f=1.0MHz
Output Capacitance
VGS=0V, VDS=5.0V, f=1.0MHz
Reverse Transfer Capacitance
VGS=0V, VDS=5.0V, f=1.0MHz
Ciss -
21 -
Coss - 19.7
-
Crss - 8.1 -
pF
WEITRON
http://www.weitron.com.tw
2/6
08-Sep-09
Datasheet pdf - http://www.DataSheet4U.net/


Part Number 2N4003K
Description N-Channel Enhancement Mode Power MOSFET
Maker Weitron Technology
PDF Download

2N4003K Datasheet PDF






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