WT2310 Description
WT2310 N-Channel Enhancement Mode Power MOSFET 1 GATE 3 DRAIN DRAIN CURRENT 3 AMPERS DRAIN SOUCE VOLTAGE 60 VOLTAGE.
WT2310 Key Features
- Super High Dense Cell Design For Low RDS(ON) RDS(ON)<90mΩ@VGS=10V -Rugged and Reliable -Simple Drive Requirement -SOT-23
- V ns nC