900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Weitron Technology

WT4410M Datasheet Preview

WT4410M Datasheet

Surface Mount N-Channel Enhancement Mode MOSFET

No Preview Available !

www.DataSheet4U.com
Surface Mount N-Channel
Enhancement Mode MOSFET
P b Lead(Pb)-Free
Features:
*Super high dense cell design for low RDS(ON)
RDS(ON) <11 m@VGS =10V
RDS(ON) <15 m@VGS =4.5V
*Rugged and Reliable
*SO-8 Package
WT4410M
DRAIN CURRENT
10 AMPERES
DRAIN SOURCE VOLTAGE
30 VOLTAGE
1
SO-8
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ =125 C)(1)
Pulsed Drain Current (2)
Drain-Source Diode Forward Current (1)
VDS
VGS
ID
IDM
IS
Power Dissipation (1)
Maximax Junction-to-Ambient
PD
R θJA
Value
30
-+20
10
30
2.3
2.5
50
Operating Junction and Storage
Temperature Range
TJ, Tstg
-55 to 150
Device Marking
WT4410M=SDM4410
Unite
V
V
A
A
A
W
C/W
C
WEITRON
http://www.weitron.com.tw
1/6
01-Jul-05




Weitron Technology

WT4410M Datasheet Preview

WT4410M Datasheet

Surface Mount N-Channel Enhancement Mode MOSFET

No Preview Available !

www.DataSheet4U.com
WT4410M
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic
Static (2)
Drain-Source Breakdown Voltage
VGS=0V, ID=250 uA
Gate-Source Threshold Voltage
VDS=VGS, ID=250 uA
Gate-Source Leakage Current
VDS=0V, VGS=-+16V
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
Drain-Source On-Resistance
VGS=10V, ID=10A
VGS=4.5V, ID=5A
On-State Drain Current
VDS=10V, VGS=10A
Symbol
V(BR)DSS
VGS (th)
IGSS
IDSS
rDS (on)
ID(on)
Min
30
1
-
-
-
-
40
Typ
-
1.5
-
-
11
15
-
Forward Transconductance
VDS=10V, ID=20A
Dynamic(3)
Input Capacitance
VDS=15V, VGS=0V, f=1MHZ
Output Capacitance
VDS=15V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=15V, VGS=0V, f=1MHZ
gfs
Ciss
Coss
Crss
-
-
-
-
18
1375
670
200
Switching (3)
Turn-On Delay Time
VGS =10V,VDD =15V, ID=-1A, RGEN=6
Rise Time
VGS =10V,VDD =15V, ID=-1A, RGEN=6
Turn-Off Time
VGS =10V,VDD =15V, ID=-1A, RGEN=6
Fall Time
VGS =10V,VDD =15V, ID=-1A, RGEN=6
Total Gate Charge
VDS=10V, ID=10A, VGS =10V
VDS=10V, ID=10A, VGS =4.5V
Gate-Source Charge
VDS=10V, ID=10A, V GS=10V
Gate-Drain Charge
VDS=10V, ID=10A, V GS=10V
Drain-Source Diode Forward Voltage
VGS=0V, IS=2.3A
td(on)
-
30
t r - 32
td(off ) - 132
tf -
Qg -
-
Qgs -
Qgd -
30
40
20
8.2
5.3
VSD - 0.76
Note: 1. Surface Mounted on FR4 Board t <_ 10sec.
2. Pulse Test : PW<_ 300us, Duty Cycle <_ 2%.
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw
2/6
Max
-
3
-+100
1
13.5
20
-
-
Unit
V
V
nA
uA
m
A
S
-
- PF
-
- nS
- nS
- nS
- nS
nc
50
24
- nc
- nc
1.1 V
01-Jul-05


Part Number WT4410M
Description Surface Mount N-Channel Enhancement Mode MOSFET
Maker Weitron Technology
PDF Download

WT4410M Datasheet PDF






Similar Datasheet

1 WT4410M Surface Mount N-Channel Enhancement Mode MOSFET
Weitron Technology





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy