PNP/NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
Rating
Collector-Emitter Voltage
Collector-B ase Voltage
Emitter-B ase Voltage
Collector Current (DC)
Collector Current (Pulse)1
B ase Current
Total Device Dissipation Tc=25 C
TA=25°C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCB O
VE B O
IC(DC)
IC (Pulse)
IB (Pulse)
PD
Tj
Tstg
WTP772
WTP882
TO-251
1.BASE
2.COLLECTOR
3.EMITTER
123
PNP/WTP772
-30
-40
-5 . 0
-3 . 0
-7 . 0
-0 . 6
NPN/WTP882
30
40
5.0
3.0
7.0
0.6
10
1.4
150
-55 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
C
C
Device Marking
WTP 772=B 772 , WTP 882=D882
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -10/ 10 mAdc, IB=0)
Collector-B ase B reakdown Voltage (IC= -100/ 100 µAdc, IE=0)
Emitter-B ase B reakdown Voltage (IE= -100/ 100 µAdc, IC=0)
Collector Cutoff Current (VCE= -30/ 30 Vdc, I B =0)
Collector Cutoff Current (VCB = -40/ 40 Vdc, IE=0)
Emitter Cutoff Current (VEB = -6.0/ 6.0Vdc, I C =0)
N OT E : 1 . P W 3 5 0 us , duty cycle 2 %
Symbol Min Max
V(BR)CEO -30/ 30 -
V(B R)CB O -40/ 40
V(B R)EB O -5.0/ 5.0
-
-
ICE0
- -1.0/ 1.0
ICBO
- -1.0/ 1.0
IEBO
- -1.0/ 1.0
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
WEITRON
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