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EDI2AG272129V - 2 Megabyte Sync/Sync Burst

Description

The EDI2AG272129VxxD1 is a Synchronous/ Synchronous Burst SRAM, 72 position SO DIMM (144 contacts) Module, organized as 2x128Kx72.

The Module contains four (4) Synchronous Burst Ram Devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilayer FR4 Sub strate.

Features

  • 2x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Sequential Burst MODE Clock Controlled Registered Bank Enables (E1#, E2#) Clock Controlled Byte Write Mode Enable (BWE#) Clock Controlled Byte Write Enables (BW1# - BW8#) Clock Controlled Registered Address Clock Controlled Registered Global Write (GW#) Aysnchronous Output Enable (G#) Internally self-timed Write Gold Lead Finish 3.3V ± 10% Operation Access Speed(s): TKHQV=8.5, 9, 10, 12ns Common Data I/O High Capacitance (30pf) d.

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Datasheet Details

Part number EDI2AG272129V
Manufacturer White Electronic
File Size 188.40 KB
Description 2 Megabyte Sync/Sync Burst
Datasheet download datasheet EDI2AG272129V Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com White Electronic Designs EDI2AG272129V ADVANCED* 2 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES 2x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Sequential Burst MODE Clock Controlled Registered Bank Enables (E1#, E2#) Clock Controlled Byte Write Mode Enable (BWE#) Clock Controlled Byte Write Enables (BW1# - BW8#) Clock Controlled Registered Address Clock Controlled Registered Global Write (GW#) Aysnchronous Output Enable (G#) Internally self-timed Write Gold Lead Finish 3.3V ± 10% Operation Access Speed(s): TKHQV=8.
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