WED3DL328V Datasheet | White Electronic Designs

.. White Electronic Designs DESCRIPTION 8Mx32 SDRAM Features - - - - - - - 53% Space Savings vs. Monolithic Solution Reduced System Inductance and Capacitance Pinout and Footprint patible to SSRAM 119 BGA 3.3V Operating Supply Voltage Fully Synchronous to Positive Clock Edge Clock Frequencies of 133MHZ, 125MHZ and 100MHZ Burst Operation The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 14mm by 22mm, BGA. The WED3DL328V is an ideal SDRAM wide I/O memory solution for all high performance, puter applications which include Network Processors, DSPs and Functional ASICs. The WED3DL328V is available in clock speeds of 133MHZ, 125MHZ and 100MHZ. The range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. The package and design provides performance enhancements via a 50% reduction in capacitance vs. two monolithic devices. The design includes internal ground and power planes which reduces inductance on the ground and power pins allowing for improved decoupling and a reduction in system noise. - - - - - - - - - Sequential or Interleave Burst Length = Programmable 1, 2, 4, 8 or Full Page Burst Read and Write Multiple Burst Read and Single Write Data Mask Control Per Byte Auto and Self Refresh Automatic and Controlled Precharge mands Suspend Mode and Power Down Mode 119 Pin BGA, JEDEC MO-163 PIN CONFIGURATION (TOP VIEW) 1 A B C D E F G H J K L M N P R T U VCCQ NC NC DQc DQc VCCQ DQc DQc VCCQ DQd DQd VCCQ DQd DQd NC NC VCCQ 1 2 NC NC NC NC DQc DQc DQc DQc VCC DQd DQd DQd DQd NC A6 NC NC 2 3 BA0 NC/A12- BA1 VSS VSS VSS DQMC VSS NC VSS DQMD VSS VSS VSS NC A5 NC 3 4 NC CAS# VCC NC CE# RAS# NC CKE VCC CK NC WE# A1 A0 VCC A4 NC 4 5 A10 A11 A9 VSS VSS VSS...