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WED3DL644V Datasheet Preview

WED3DL644V Datasheet

4Mx64 SDRAM

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WED3DL644V
4Mx64 SDRAM
FEATURES
53% Space Savings vs. Monolithic Solution
Reduced System Inductance and Capacitance
3.3V Operating Supply Voltage
Fully Synchronous to Positive Clock Edge
Clock Frequencies of 133, 125 and 100MHZ
Burst Operation
Sequential or Interleaved
Burst Length = Programmable 1, 2, 4, 8 or Full
Page
Burst Read and Write
Multiple Burst Read and Single Write
Data Mask Control Per Byte
Auto and Self Refresh
Automatic and Controlled Precharge Commands
Suspend Mode and Power Down Mode
17mm x 23mm, 153 BGA
DESCRIPTION
The WED3DL644V is a 4Mx64 Synchronous DRAM
configured as 4x1Mx64. The SDRAM BGA is constructed
with four 4Mx16 SDRAM die mounted on a multi-layer
laminate substrate and packaged in a 153 lead, 17mm by
23mm, BGA.
The WED3DL644V is available in clock speeds of 133MHZ,
125MHZ and 100MHZ. The range of operating frequencies,
programmable burst lengths and programmable latencies
allow the same device to be useful for a variety of
high bandwidth, high performance memory system
applications.
The package and design provides performance
enhancements via a 50% reduction in capacitance vs.
four monolithic devices. The design includes internal ground
and power planes which reduces inductance on the ground
and power pins allowing for improved decoupling and a
reduction in system noise.
This product is subject to change without notice.
PINOUT (TOP VIEW)
1 2 3 4 56 7 8 9
A DQ41 DQ43 DQ45 DQ47 NC DQ48 DQ50 DQ52 DQ54
B DQ40 DQ42 DQ44 DQ46 NC DQ49 DQ51 DQ53 DQ55
C DQ33 DQ35 DQ37 DQ39 NC DQ56 DQ58 DQ60 DQ62
D DQ32 DQ34 DQ36 DQ38 NC DQ57 DQ59 DQ61 DQ63
E NC DQML2 DQMH2 VCC VCC VCC DQML3 DQMH3 NC
F NC
VCCQ
VCCQ
VCC VCC VCC VCCQ VCCQ
A3
G CE2# CE3# VSS VSS VSS VSS VSS A4 A2
H NC NC VSS CK1 VSS VSS VSS A5 A1
J NC CKE CAS# RAS# WE# A9 A11 A6 A0
K NC NC
VSS CK0 VSS VSS VSS
A7 A10
L CE1# CE0# VSS
VSS VSS VSS VSS
A8 BA1
M NC
VCCQ
VCCQ
VCC VCC VCC VCCQ VCCQ BA0
N NC DQMH1 DQML1 VCC VCC VCC DQMH0 DQML0 NC
P DQ30 DQ28 DQ26 DQ24 NC DQ06 DQ04 DQ02 DQ00
R DQ31 DQ29 DQ27 DQ25 NC DQ07 DQ05 DQ03 DQ01
T DQ22 DQ20 DQ18 DQ16 NC DQ14 DQ12 DQ10 DQ08
U DQ23 DQ21 DQ19 DQ17 NC DQ15 DQ13 DQ11 DQ09
PIN DESCRIPTION
A0 – A11
BA0-1
DQ0-63
CK0-1
CKE
DQML0-3
DQMH0-3
RAS#
CAS#
WE#
CE0-3#
VCC
VCCQ
VSS
Address Bus
Bank Select Addresses
Data Bus
Clock
Clock Enable
Data Input/Output Masks
Row Address Strobe
Column Address Strobe
Write Enable
Chip Enables
Power Supply pins, 3.3V
Data Bus Power Supply, 3.3V
Ground pins
August 2005
Rev. 6
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com




White Electronic Designs

WED3DL644V Datasheet Preview

WED3DL644V Datasheet

4Mx64 SDRAM

No Preview Available !

Whitewww.datasheet4u.com Electronic Designs
FIG. 1 4MX64 SDRAM BLOCK DIAGRAM
DQ0-63
SA0-11
BA0-1
WE#
CAS#
RAS#
CKE
CK0
CK1
WED3DL644V
CE0#
CE1#
CE2#
CE3#
A0-A11
BA0-1
WE#
CAS#
RAS#
CE#
CKE
CK
DQ0-15
U1
1M x 16 x 4
DQML
DQMH
A0-A11
BA0-1
WE#
CAS#
RAS#
CE#
CKE
CK
DQ16-31
U2
1M x 16 x 4
DQML
DQMH
A0-A11
BA0-1
WE#
CAS#
RAS#
CE#
CKE
CK
DQ32-47
U3
1M x 16 x 4
DQML
DQMH
A0-A11
BA0-1
WE#
CAS#
RAS#
CE#
CKE
CK
DQ48-63
U4
1M x 16 x 4
DQML
DQMH
DQML0
DQMH0
DQML1
DQMH1
DQML2
DQMH2
DQML3
DQMH3
August 2005
Rev. 6
2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com


Part Number WED3DL644V
Description 4Mx64 SDRAM
Maker White Electronic Designs
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