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WV3HG128M72AER-D6 - 1GB - 128Mx72 DDR2 SDRAM REGISTERED

General Description

The WV3HG128M72AER is a 128Mx72 Double Data Rate DDR2 SDRAM high density module.

This memory module consists of eighteen 128Mx4 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 240-pin DIMM FR4 substrate.

This product is under development, is not qualified or characterized

Key Features

  • 240-pin, dual in-line memory module Fast data transfer rates: PC2-6400.
  • , PC2-5300.
  • , PC2-4300 and PC2-3200 Utilizes 800, 667, 533 and 400 MT/s DDR2 SDRAM components VCC = VCCQ = 1.8V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture DLL to align DQ and DQS transitions with CK Multiple internal device banks for concurrent operation Supports duplicate output strobe (RDQS/RDQS#) Programmable CAS# latency (CL): 3, 4, 5 and.

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Datasheet Details

Part number WV3HG128M72AER-D6
Manufacturer White Electronic Designs
File Size 200.12 KB
Description 1GB - 128Mx72 DDR2 SDRAM REGISTERED
Datasheet download datasheet WV3HG128M72AER-D6 Datasheet

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White Electronic Designs WV3HG128M72AER-D6 ADVANCED* 1GB – 128Mx72 DDR2 SDRAM REGISTERED, w/PLL FEATURES 240-pin, dual in-line memory module Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4300 and PC2-3200 Utilizes 800, 667, 533 and 400 MT/s DDR2 SDRAM components VCC = VCCQ = 1.8V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture DLL to align DQ and DQS transitions with CK Multiple internal device banks for concurrent operation Supports duplicate output strobe (RDQS/RDQS#) Programmable CAS# latency (CL): 3, 4, 5 and 6 Adjustable data-output drive strength On-die termination (ODT) Posted CAS# latency: 0, 1, 2, 3 and 4 Serial Presence Detect (SPD) with EEPROM 64ms: 8,192 cycle refresh Gold edge contacts www.