W364M72V-XSBX Description
The 512MByte (4.5Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 512M bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s 134,217,728-bit banks is organized as 8,192 rows by 2,048 columns by 8 bits.
W364M72V-XSBX Key Features
- TBD grams typical
- 55% I/O Reduction Reduced trace lengths for lower parasitic capacitance Suitable for hi-reliability
W364M72V-XSBX Applications
- This product is under development, is not qualified or characterized and is subject to change or cancellation without notice