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WE512K8, WE256K8, WE128K8-XCX
512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091
512Kx8 BIT CMOS EEPROM MODULE FEATURES
Read Access Times of 150, 200, 250, 300ns JEDEC Standard 32 Pin, Hermetic Ceramic DIP (Package 300) Commercial, Industrial and Military Temperature Ranges MIL-STD-883 Compliant Devices Available Write Endurance 10,000 Cycles Data Retention at 25°C, 10 Years Low Power CMOS Operation: 3mA Standby Typical/100mA Operating Maximum Automatic Page Write Operation Internal Address and Data Latches for 512 Bytes, 1 to 128 Bytes/Row, Four Pages Page Write Cycle Time 10mS Max.