Datasheet4U Logo Datasheet4U.com

WCM2001 - MOSFET

General Description

The WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Standard Product WCM2001 is Pb-free.

Key Features

  • z Trench Technology z Supper high density cell design for extremely low Rds(on) z Exceptional ON resistance and maximum DC current capability z Small package design with DFN2x2-6L.

📥 Download Datasheet

Datasheet Details

Part number WCM2001
Manufacturer WillSEMI
File Size 1.02 MB
Description MOSFET
Datasheet download datasheet WCM2001 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WCM2012 CHIP INDUCTOR AiT Semiconductor
WCM2012 SMD Wire Wound Common Mode Filter SPORTON
WCM2012B121BE Wire-wound Common Mode Filter INPAQ
WCM2012B181BE Wire-wound Common Mode Filter INPAQ
WCM2012B201BE Wire-wound Common Mode Filter INPAQ

Other Datasheets by WillSEMI

Part Number Description
WCM2002 MOSFET
WCM2007 MOSFET
WCM2064 MOSFET
WCM2068 MOSFET
WCM2070 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WCM2001 N- and P-Channel Complementary, 20V, MOSFET V(BR)DSS N-Channel 20 V P-Channel -20 V RDS(on) Typ. ( mȍ) 180 @ 4.5V 225 @ 2.5V 280 @ 1.8V 85 @ -4.5V 110 @ -2.5V 150 @ -1.8V Descriptions The WCM2001 is the N- and P-Channel enhancement MOS Field Effect Transistor as a single package for DC-DC converter or Load switch applications, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Standard Product WCM2001 is Pb-free. WCM2001 Http://www.willsemi.com D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) Features z Trench Technology z Supper high density cell design for extremely low Rds(on) z Exceptional ON resistance and maximum DC current capability z Small package design with DFN2x2-6L.