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WillSEMI

WNM2072 Datasheet Preview

WNM2072 Datasheet

MOSFET

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WNM2072
WNM2072
Single N-Channel, 20V, 0.71A, Power MOSFET
VDS (V)
20
ESD Protected
Descriptions
Typical Rds(on) (Ω)
0.220@ VGS=4.5V
0.260@ VGS=2.5V
0.315@ VGS=1.8V
Http://www.sh-willsemi.com
G
S
D
DFN1006-3L
The WNM2072 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2072 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN1006-3L
Applications
D
GS
Pin configuration (Top view)
F
F = Device Code
* = Month (A~Z)
Marking
Small Signal Switching
Small Moto Driver
Order information
Device
WNM2072-3/TR
Package
DFN1006-3L
Shipping
10K/Tape& Reel
Will Semiconductor Ltd.
1
2015/6/24 – Rev. 1.0




WillSEMI

WNM2072 Datasheet Preview

WNM2072 Datasheet

MOSFET

No Preview Available !

Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b d
Maximum Power Dissipation b d
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNM2072
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
±5
0.71 0.66
0.57 0.52
0.32 0.27
0.20 0.17
0.67 0.62
0.54 0.50
0.28 0.24
0.18 0.15
1.4
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ≤ 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ≤ 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
350
395
397
445
240
Maximum
390
455
435
505
280
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Pulse width<380μs, Single pulse
d Maximum junction temperature TJ=150°C.
e Pulse test: Pulse width <380 us duty cycle <2%.
Will Semiconductor Ltd.
2
2015/6/24 – Rev. 1.0


Part Number WNM2072
Description MOSFET
Maker WillSEMI
Total Page 7 Pages
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