WNMD2176 Description
WNMD2176 Dual N-Channel, 20V, 2.6A, Power MOSFET WNMD2176 .sh-willsemi. VDS (V) Typical RDS(on) (mΩ) 20 56@ VGS=4.5V 76@ VGS=2.5V ESD Protected Descriptions The WNMD2176 is N-Channel enhancement MOS Field Effect Transistor.Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.This device is suitable for use in DC-DC conversion,power switch and charging circuit. Standard Product...
WNMD2176 Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Extremely Low Threshold Voltage
- Small package SOT-23-6L