WNMD2176
Dual N-Channel, 20V, 2.6A, Power MOSFET
WNMD2176
www.sh-willsemi.com
VDS (V)
Typical RDS(on) (mΩ)
20 56@ VGS=4.5V
76@ VGS=2.5V
ESD Protected
Descriptions
The WNMD2176 is N-Channel enhancement
MOS Field Effect Transistor.Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge.This device is suitable for use
in DC-DC conversion,power switch and charging
circuit. Standard Product WNMD2176 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23-6L
Applications
SOT-23-6L
D1 S1 D2
6 54
1 23
G1 S2 G2
Pin configuration (Top view)
6 54
2176
NDYW
1 23
2176
ND
Y
W
= Device Code
= Special Code
= Year
=Week(A~z)
Driver for Relay, Solenoid, Motor, LED etc.
Power supply converters circui t
Load/Power Switching for portable device
Marking
Order information
Device
Package
Shipping
WNMD2176-6/TR SOT-23-6L 3000/Tape&Reel
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.0
