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WNMD2176 Datasheet Preview

WNMD2176 Datasheet

MOSFET

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WNMD2176
Dual N-Channel, 20V, 2.6A, Power MOSFET
WNMD2176
www.sh-willsemi.com
VDS (V)
Typical RDS(on) (mΩ)
20 56@ VGS=4.5V
76@ VGS=2.5V
ESD Protected
Descriptions
The WNMD2176 is N-Channel enhancement
MOS Field Effect Transistor.Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge.This device is suitable for use
in DC-DC conversion,power switch and charging
circuit. Standard Product WNMD2176 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23-6L
Applications
SOT-23-6L
D1 S1 D2
6 54
1 23
G1 S2 G2
Pin configuration (Top view)
6 54
2176
NDYW
1 23
2176
ND
Y
W
= Device Code
= Special Code
= Year
=Week(A~z)
Driver for Relay, Solenoid, Motor, LED etc.
Power supply converters circui t
Load/Power Switching for portable device
Marking
Order information
Device
Package
Shipping
WNMD2176-6/TR SOT-23-6L 3000/Tape&Reel
Will Semiconductor Ltd. 1 Jan, 2015 - Rev.1.0




WillSEMI

WNMD2176 Datasheet Preview

WNMD2176 Datasheet

MOSFET

No Preview Available !

Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNMD2176
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 s Steady State
20
±10
2.8 2.6
2.3 2.1
1.1 0.9
0.7 0.6
2.6 2.3
2.0 1.9
0.9 0.7
0.5 0.4
7
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Ambient Thermal Resistance a t ≤ 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ≤ 10 s
Steady State
Symbol
RθJA
RθJA
Junction-to-Case Thermal Resistance
Steady State RθJC
Typical
90
110
105
133
60
Maximum
108
130
128
158
75
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Jan, 2015 - Rev.1.0


Part Number WNMD2176
Description MOSFET
Maker WillSEMI
Total Page 6 Pages
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