Description
The WNMD2178 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circuit board is not required because the Drains of the MOSFET1 and the MOSFET2 are internally connected.
Features
- Trench Technology.
- Supper high density cell design.
- Excellent ON resistance for higher DC current.
- Extremely Low Threshold Voltage.
- Small package DFN2X2-4L
34
2 1
Bottom View DFN2X2-4L
43 S2 G2
2178 NDYW
S1 G1 12
4: Source 2 3: Gate 2 1: Source 1 2: Gate 1 2178 = Device Code N D =Special Code.
WNMD2178-WillSEMI.pdf
