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WNMD2178 Datasheet Preview

WNMD2178 Datasheet

MOSFET

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WNMD2178
WNMD2178
Dual N-Channel, 20V, 6A, Power MOSFET
www.sh-willsemi.com
Vsss (V)
Typ Rss(on) (mΩ)
23.5@ VGS=4.5V
24@ VGS=4.0V
20
26@ VGS=3.1V
29@ VGS=2.5V
ESD Rating:2000V HBM
Descriptions
The WNMD2178 is Dual N-Channel enhancement
MOS Field Effect Transistor and connecting the Drains
on the circuit board is not required because the Drains
of the MOSFET1 and the MOSFET2 are internally
connected. Uses advanced trench technology and
design to provide excellent RSS(ON) with low gate
charge. This device is designed for Lithium-Ion battery
protection circuit. The WNMD2178 is available in
DFN2X2-4L package. Standard Product WNMD2178
is Pb-free and Halogen-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN2X2-4L
34
2
1
Bottom View
DFN2X2-4L
43
S2 G2
2178
NDYW
S1 G1
12
4: Source 2 3: Gate 2
1: Source 1 2: Gate 1
2178 = Device Code
N D =Special Code
Y = Year
W = WeekA~z
Pin configuration (TOP view)& Marking
Applications
Lithium-Ion battery protection circuit
Order information
Device
WNMD2178-4/TR
Package
DFN2X2-4L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 July.2015 Rev. 1.0




WillSEMI

WNMD2178 Datasheet Preview

WNMD2178 Datasheet

MOSFET

No Preview Available !

Electronics Characteristics (Ta=25oC, unless otherwise noted)
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Source to Source Voltage
Zero Gate Voltage Drain Current
VSSS
ISSS
VGS = 0 V, IS = 250uA
VSS =16 V, VGS = 0V
TEST CIRCUIT 1
Gate Leakage Current
VSS = 0 V, VGS = ±12V
IGSS
TEST CIRCUIT 2
ON CHARACTERISTICS
Gate to Source Cut-off Voltage
VGS(off)
VGS = VSS, IS = 250uA
TEST CIRCUIT 3
VGS = 4.5V, IS = 6.0A
TEST CIRCUIT 5
Source to Source On-state
Resistance
RSS(on)
VGS = 4.0V, IS = 6.0A
TEST CIRCUIT 5
VGS = 3.1V, IS = 6.0A
TEST CIRCUIT 5
VGS = 2.5V, IS = 5.0A
TEST CIRCUIT 5
Forward Transfer Admittance
| yfs |
VSS = 5 V, IS = 1.8A
TEST CIRCUIT 4
BODY DIODE CHARACTERISTICS
Body Diode Forward Voltage
VF(S-S)
VGS = 0 V, IF = 1.0A
TEST CIRCUIT 6
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
tf
VGS = 4.5 V, VSS=10V,
IS=3A,RG=6
TEST CIRCUIT 8
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, f = 1kHz,
VSS = 10 V
TEST CIRCUIT 7
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
QG(TOT)
QG(TH)
QGS
QGD
VG1S1 = 4.5 V, VSS = 10V,
IS =6A
TEST CIRCUIT 9
WNMD2178
Min Typ Max Unit
20 V
1 uA
±10 uA
0.4 0.72 1.0 V
17 23.5 31
17 24 33 mΩ
19 26 43
20 29 52
11 S
1.5 V
572
2108
5880
4960
1240
332
189
17.8
0.65
2.5
5.1
ns
pF
nC
Will Semiconductor Ltd. 2 July.2015 Rev. 1.0


Part Number WNMD2178
Description MOSFET
Maker WillSEMI
Total Page 7 Pages
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