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WillSEMI

WNMD2180 Datasheet Preview

WNMD2180 Datasheet

MOSFET

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WNMD2180
Dual N-Channel, 20V, 11A, Power MOSFET
VDS (V)
20
Typical Rds(on) (m)
8.5@ VGS=4.5V
8.9@ VGS=3.8V
9.6@ VGS=3.1V
11@ VGS=2.5V
ESD Protected
Descriptions
The WNMD2180 is Dual N-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WNMD2180 is Pb-free and
Halogen-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package PDFN3×3-8L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
WNMD2180
Http://www.sh-willsemi.com
PDFN3×3-8L
  
Pin configuration (Top view)
87 65
2180
NDYW
1 234
2180
ND
Y
W
= Device Code
= Special Code
= Year
= Week
Marking
Order information
Device
Package
Shipping
WNMD2180-8/TR PDFN3×3-8L 3000/Reel&Tape
Will Semiconductor Ltd. 1 2016/11/21- Rev.1.1




WillSEMI

WNMD2180 Datasheet Preview

WNMD2180 Datasheet

MOSFET

No Preview Available !

Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNMD2180
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
±10
11.0 8.2
8.8 6.6
1.7 0.9
1.1 0.6
10.8 7.7
8.6 6.1
1.6 0.8
1.0 0.5
50
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
Junction-to-Ambient Thermal Resistance a t 10 s
Steady State
RθJA
Junction-to-Ambient Thermal Resistance b t 10 s
Steady State
RθJA
Junction-to-Case Thermal Resistance
Steady State RθJC
Typical
61
102
65
120
54
Maximum
72
128
75
148
63
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 2016/11/21- Rev.1.1


Part Number WNMD2180
Description MOSFET
Maker WillSEMI
Total Page 8 Pages
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