z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L Applicat.

Pin configuration (Top view) 6 54 2037 YYWW 12 3 2037 YY WW = Device Code = Year = Week Marking z Driver for Rel.

The WPM2037 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. .

WPM2031

WPM2005

WPM2005B

WPM2006

WPM2009D

WPM2014

WPM2015

WPM2015-3

WPM2019

WPM2026

WPM2045

WPM2048

WPM2049