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WillSEMI

WPM3005 Datasheet Preview

WPM3005 Datasheet

MOSFET

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WPM3005
Single P-Channel, -30V, -4.1A, Power MOSFET
WPM3005
Http://www.sh-willsemi.com
VDS (V)
-30
Rds(on) (ȍ)
0.057@ VGS=̢10.0V
0.057@ VGS=̢10.0V
0.083@ VGS=̢4.5V
0.083@ VGS=̢4.5V
Descriptions
The WPM3005 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM3005 is Pb-free and
Halogen-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23-3L
SOT-23-3L
D
3
12
GS
Pin configuration (Top view)
3
W35*
12
W35= Device Code
* = Month (A~Z)
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Marking
Order information
Device
Package
Shipping
WPM3005-3/TR SOT-23-3L 3000/Reel&Tape
Will Semiconductor Ltd.
1
2015/08/25 – Rev. 1.3




WillSEMI

WPM3005 Datasheet Preview

WPM3005 Datasheet

MOSFET

No Preview Available !

Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WPM3005
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
-30
±20
-4.1 -3.4
-3.3 -2.7
1.4 1.0
0.9 0.6
-3.8 -3.2
-3.0 -2.5
1.2 0.8
0.8 0.5
-25
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t ” 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ” 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RșJA
RșJA
RșJC
Typical
65
90
85
115
40
Maximum
85
125
100
140
60
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd.
2
2015/08/25 – Rev. 1.3


Part Number WPM3005
Description MOSFET
Maker WillSEMI
Total Page 7 Pages
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