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WillSEMI

WPM6205 Datasheet Preview

WPM6205 Datasheet

MOSFET

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WPM6205
Single P-Channel, -20V, -4.8A, Power MOSFET
WPM6205
Http://www.sh-willsemi.com
VDS (V)
-20
Typical RDS(on) (m)
33@ VGS=-4.5V
44@ VGS=-2.5V
65@ VGS=-1.8V
Descriptions
The WPM6205 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM6205 is Pb-free.
Features
SOT-23-3L
D
3
12
GS
Pin configuration (Top view)
Trench Technology
Supper high density cell design
Excellent ON resistance
Extremely Low Threshold Voltage
Small package SOT-23-3L
Applications
DC/DC converters
Power supply converters circuit
Load/Power Switching for portable device
PA = Device Code
Y = Year
W = Week(A~z)
Marking
Order information
Device
WPM6205-3/TR
Package
Shipping
SOT-23-3L 3000/Tape&Reel
Will Semiconductor Ltd. 1 Aug.2016- Rev.1.1




WillSEMI

WPM6205 Datasheet Preview

WPM6205 Datasheet

MOSFET

No Preview Available !

Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b d
Maximum Power Dissipation b d
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WPM6205
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 s Steady State
-20
±12
-4.8 -4.1
-3.8 -3.3
1.5 1.1
0.9 0.7
-4.2 -3.8
-3.4 -3.0
1.1 0.9
0.7 0.6
-20
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
t 10 s
Junction-to-Ambient Thermal Resistance a
Steady State
RθJA
t 10 s
Junction-to-Ambient Thermal Resistance b
Steady State
RθJA
Junction-to-Case Thermal Resistance
Steady State RθJC
Typical
70
90
95
110
40
Maximum
85
115
110
135
60
.
a. Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu.
b. Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu.
c. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%.
d. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
Unit
°C/W
Will Semiconductor Ltd. 2 Aug.2016- Rev.1.1


Part Number WPM6205
Description MOSFET
Maker WillSEMI
Total Page 7 Pages
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