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WillSEMI

WSB5511M Datasheet Preview

WSB5511M Datasheet

Schottky Barrier Diode

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WSB5511M
3A Schottky Barrier Diode
Features
Low forward voltage
Extremely low thermal resistance
High current capability
Applications
Switching circuit
Middle current rectification
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (DC)
Forward Peak Surge Current (1)
Junction temperature
Operating temperature
Storage temperature
WSB5511M
Http://www.sh-willsemi.com
SMA (DO-214AC)
Circuit
Symbol
VRRM
VR
IO
IFSM
TJ
Topr
Tstg
Marking
Value
40
40
3.0
50
-55 ~ 150
-55 ~ 150
-55 ~ 150
Unit
V
V
A
A
OC
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Symbol
Condition
Forward voltage (2)
Reverse current
Junction capacitance
Thermal resistance
VF
IR
CJ
Rθ(J-L)
IF=3.0A
VR=40V
VR=4V, F=1MHz
Junction to Lead (Fig.2)
Min.
Typ.
220
17
Max.
0.50
0.5
Unit
V
mA
pF
K/W
Order Informations
Device
WSB5511M-2/TR
Package
SMA (DO-214AC)
Marking
.EC* (3)
Shipping
5000/Reel&Tape
Note1: Pulse width=8.3ms, single pulse;
Note2: Single Pulse, test Tp=380us;
Note3: * =Month code (A~Z); .EC =Device code
Will Semiconductor Ltd.
1 May, 2014 - Rev. 1.5




WillSEMI

WSB5511M Datasheet Preview

WSB5511M Datasheet

Schottky Barrier Diode

No Preview Available !

Typical characteristics (Ta=25oC, unless otherwise noted)
WSB5511M
+150oC
1 +125oC
0.1
+85oC
+65oC
+25oC
0.01
1E-3
0.0
0oC
-50oC
0.2 0.4
Forward Voltage(V)
100000
10000
1000
100
10
1
0.1
0.01
1E-3
0.6 5
+125oC
+85oC
+65oC
+25oC
0oC
-50oC
10 15 20 25 30 35 40
Reverse Voltage(V)
Fig.1 Forward voltage vs. Forward current
Fig.2 Reverse current vs. Reverse voltage
4 1000
3 800
600
2
400
1 200
0
0 25 50 75 100 125 150
Lead temperature(oC)
Fig.3 Maximum Forward Current Derating Curve
0
0 5 10 15 20 25
Reverse Voltage(V)
Fig.4 Junction capacitance vs. Reverse voltage
Will Semiconductor Ltd.
2 May, 2014 - Rev. 1.5


Part Number WSB5511M
Description Schottky Barrier Diode
Maker WillSEMI
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WSB5511M Datasheet PDF






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