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WSB5511M
3A Schottky Barrier Diode
Features
Low forward voltage Extremely low thermal resistance High current capability
Applications
Switching circuit Middle current rectification
Absolute maximum ratings
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (DC) Forward Peak Surge Current (1) Junction temperature Operating temperature Storage temperature
WSB5511M
Http://www.sh-willsemi.com
SMA (DO-214AC)
Circuit
Symbol VRRM VR IO IFSM TJ Topr Tstg
Marking
Value 40 40 3.0 50
-55 ~ 150 -55 ~ 150 -55 ~ 150
Unit V V A A OC OC OC
Electronics characteristics (TA=25oC)
Parameter
Symbol
Condition
Forward voltage (2) Reverse current Junction capacitance Thermal resistance
VF IR CJ Rθ(J-L)
IF=3.
WSB5511M Datasheet
