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WillSEMI

WSB5523M Datasheet Preview

WSB5523M Datasheet

Schottky Barrier Diode

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WSB5523M
Ultra Low Forward Voltage,
Schottky Barrier Diode
WSB5523M
Http://www.sh-willsemi.com
Features
Schottky barrier rectifier
Guarding protection
Ultra Low forward voltage
Reverse energy tested
High current capability
Extremely low thermal resistance
Standard products are Pb-free and
Halogen-free
MECHANICAL DATA
Case: SMA molded plastic body
Polarity: Color band denotes cathode end
Mounting position: ANY
SMA (DO-214AC)
** = Date Code(YM)
SL34AE = Device code
Pin configuration and Marking
Order information
Device
Package
Shipping
WSB5523M-2/TR SMA (DO-214AC) 5000/Tape&Reel
Will Semiconductor Ltd.
1 May, 2014 - Rev. 1.2




WillSEMI

WSB5523M Datasheet Preview

WSB5523M Datasheet

Schottky Barrier Diode

No Preview Available !

Absolute maximum ratings
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TL=100oC
Peak forward surge current 8.3ms single half-sine-wave
Operating junction temperature range
Storage temperature range
WSB5523M
Symbol
VRRM
VRWS
VDC
IF(AV)
IFSM
TJ
TSTG
Value
40
28
40
3.0
80
-55 - 125
-55 - 150
Unit
V
V
V
A
A
oC
oC
Thermal Characteristics
Parameter
Maximum thermal resistance (Junction to Lead)
Maximum thermal resistance (Junction to Ambient)
Symbol
RθJL
RθJA
Value
20
80
Unit
oC/W
oC/W
Electronics characteristics (TA=25oC)
Parameter
Maximum instantaneous forward voltage @ IF=3.0A *
Maximum DC reverse current at rated reverse voltage @ TJ=25oC
Maximum DC reverse current at rated reverse voltage @ TJ=125oC
*: Pulse test, Pulse width 300us, duty cycle 1%, Typical Value is 0.36V
Symbol
VF
IR
IR
Value
0.4
0.2
50
Unit
V
mA
mA
Will Semiconductor Ltd.
2 May, 2014 - Rev. 1.2


Part Number WSB5523M
Description Schottky Barrier Diode
Maker WillSEMI
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WSB5523M Datasheet PDF






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