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Will Semiconductor

WNM4001 Datasheet Preview

WNM4001 Datasheet

Small Signal N-Channel MOSFET

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WNM4001
Small Signal N-Channel, 20V, 0.5A, MOSFET
V(BR)DSS
20 V
RDS(on) Max.
0.7ȍ@ 4.5V
0.85ȍ@ 2.5V
1.25ȍ@ 1.8V
ID MAX
0.5A
0.3A
0.1A
Descriptions
The WNM4001 is the N-Channel enhancement
MOS Field Effect Transistor, uses advanced trench
technology and design to provide excellent RDS(ON) with
low gate charge. This device is suitable for use in
small signal switch. Standard product WNM4001 is
Pb-free.
Features
z Trench N-Channel
z Supper high density cell design for extremely low
Rds(on)
z Exceptional ON resistance and maximum DC
current capability
z Small package design with SOT-523
WNM4001
Http://www.willsemi.com
Top
D
3
12
GS
SOT-523
D
3
12
GS
Pin Configuration
3
N3 *
12
N3 = Device Code
* = Month
Marking
Applications
z Driver: Relays, Solenoids, Lamps, Hammers
z Power supply converters circuit
z Load/Power Switching for potable device
Order Information
Device
Package
WNM4001-3/TR SOT-523
Shipping
3000/Tape&Reel
Will Semiconductor Ltd.
1
Nov, 2011 - Rev. 1.3




Will Semiconductor

WNM4001 Datasheet Preview

WNM4001 Datasheet

Small Signal N-Channel MOSFET

No Preview Available !

Absolute Maximum Ratings
(TA=25oC unless otherwise noted)
Symbol
VDSS
VGSS
ID
PD
TJ
TSG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current – Continue Note1
Drain Current – Pulsed (t<300us, Duty<2%) Note1
Power Dissipation – Note1
Operation junction temperature range
Storage temperature range
Thermal Resistance Ratings
(TA=25oC unless otherwise noted)
Symbol
RTJA
Parameter
Thermal Resistance, Junction to Ambient – Note1
Note1: Surface mounted on a 2 OZ copper, 1 in2 pad, FR-4 board.
WNM4001
Ratings
20
Œ6.0
0.5
0.8
0.25
150
-55~150
Unit
V
V
A
A
W
OC
OC
Typ. Max.
500 620
Unit
OC/W
Will Semiconductor Ltd. 2 Nov, 2011 - Rev. 1.3


Part Number WNM4001
Description Small Signal N-Channel MOSFET
Maker Will Semiconductor
PDF Download

WNM4001 Datasheet PDF





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