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WNM4001 - Small Signal N-Channel MOSFET

General Description

The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in small signal switch.

Standard product WNM4001 is Pb-free.

Key Features

  • z Trench N-Channel z Supper high density cell design for extremely low Rds(on) z Exceptional ON resistance and maximum DC current capability z Small package design with SOT-523 WNM4001 Http://www. willsemi. com Top D 3 12 GS SOT-523 D 3 12 GS Pin Configuration 3 N3.
  • 12 N3 = Device Code.
  • = Month Marking.

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Datasheet Details

Part number WNM4001
Manufacturer Will Semiconductor
File Size 108.86 KB
Description Small Signal N-Channel MOSFET
Datasheet download datasheet WNM4001 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM4001 Small Signal N-Channel, 20V, 0.5A, MOSFET V(BR)DSS 20 V RDS(on) Max. 0.7ȍ@ 4.5V 0.85ȍ@ 2.5V 1.25ȍ@ 1.8V ID MAX 0.5A 0.3A 0.1A Descriptions The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in small signal switch. Standard product WNM4001 is Pb-free. Features z Trench N-Channel z Supper high density cell design for extremely low Rds(on) z Exceptional ON resistance and maximum DC current capability z Small package design with SOT-523 WNM4001 Http://www.willsemi.