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Will Semiconductor

WSB5503W Datasheet Preview

WSB5503W Datasheet

Middle Power Schottky Barrier Diode

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WSB5503W
Middle Power Schottky Barrier Diode
Features
1A Average rectified forward current
Low forward voltage
Low leakage current
Small package SOD-323
WSB5503W
Http://www.sh-willsemi.com
SOD-323
Applications
Switching circuit
Middle current rectification
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Peak forward current (1)
Junction temperature
Operating temperature
Storage temperature
Circuit
Marking
Symbol
VRM
VR
IO
IPK
TJ
Topr
Tstg
Value
40
40
1
25
125
-40 ~ 85
-55 ~ 150
Unit
V
V
A
A
OC
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Symbol
Condition
Forward voltage
Reverse current
Junction capacitance
VF IF=1A
IR VR=VR
CJ VR=4V, F=1MHz
Order Informations
Device
Package
WSB5503W-2/TR
SOD-323
Note 1 : Pulse Width=1us, Single Pulse
Note 2 : * = Month code (A~Z); . L = Device code
Min.
-
-
-
Typ.
0.5
10
-
Marking
*.L (2)
Max.
0.57
50
120
Unit
V
uA
pF
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1 Jan, 2014 - Rev. 1.1




Will Semiconductor

WSB5503W Datasheet Preview

WSB5503W Datasheet

Middle Power Schottky Barrier Diode

No Preview Available !

Typical characteristics (Ta=25oC, unless otherwise noted)
1
Ta=85oC
0.1
Ta=25oC
1000
100
Ta=85oC
Ta=-40oC
10
0.01
1
WSB5503W
Ta=25oC
Ta=-40oC
1E-3
0 100 200 300 400 500 600 700 800
Forward Voltage: V (mV)
F
Forward voltage vs. Forward current
0.1
0.01
0
5 10 15 20 25 30 35
Reverse Voltage: V (V)
R
Reverse current vs. Reverse voltage
40
30 1000
F = 1MHz
25
V = 50mVrms
AC
20 100
15
10 10
5
0
1 10 100
Time: t (uS)
Peak pulse forward current characteristics
1
0 10 20 30
Reverse Voltage: V (V)
R
Junction capacitance vs. Reverse voltage
120
100
80
60
40
20
0
0 25 50 75 100 125
T -Lead temperature
J
Power Derating
Will Semiconductor Ltd.
2 Jan, 2014 - Rev. 1.1


Part Number WSB5503W
Description Middle Power Schottky Barrier Diode
Maker Will Semiconductor
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WSB5503W Datasheet PDF






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Will Semiconductor





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