25Q80BW Datasheet | Winbond

W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI Publication Release Date: September 01, 2014 -1- Revision L W25Q80BW 1. GENERAL DESCRIPTIONS The W25Q80BW (8M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 1.65V to 1.95V power supply with current consumption as low as 4m A active and 1µA for power-down. All devices are offered in space-saving packages. The W25Q80BW array is organized into 4,096 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q80BW has 256 erasable sectors and 16 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage. (See figure 2.) The W25Q80BW supports the standard Serial Peripheral Interface (SPI), and a high performance Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 80MHz are supported allowing equivalent clock rates of 160MHz (80MHz x 2) for Dual I/O and 320MHz (80MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions. These transfer rates can outperform standard Asynchronous 8 and 16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient memory access with as few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true XIP (execute in place) operation. A Hold pin, Write Protect pin and programmable write protection, with top, bottom or plement array control, provide...