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29EE011 Key Features

  • Single 5-volt program and erase operations Fast page-write operations
  • 128 bytes per page
  • Page program cycle: 10 mS (max.)
  • Effective byte-program cycle time: 39 µS
  • Optional software-protected data write
  • Low power consumption
  • Active current: 25 mA (typ.)
  • Standby current: 20 µA (typ.)
  • Toggle bit
  • Data polling

29EE011 Description

The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required.