W29N04GV
Description
The W29N04GV (4G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power.
Key Features
- Basic Features - Density : 4Gbit (Single chip solution) - Vcc : 2.7V to 3.6V - Bus width : x8 - Operating temperature
- Industrial: -40°C to 85°C
- Single-Level Cell (SLC) technology
- Organization
- Density: 4G-bit/512M-byte - Page size
- 2,112 bytes (2048 + 64 bytes) - Block size
- Highest Performance - Read performance (Max.)
- Random read: 25us
- Sequential read cycle: 25ns
- Write Erase performance
