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W49F102 Datasheet Preview

W49F102 Datasheet

64K x 16 CMOS FLASH MEMORY

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W49F102
64K × 16 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device
can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not
required. The unique cell architecture of the W49F102 results in fast program/erase operations with
extremely low current consumption (compared to other comparable 5-volt flash memory products). The
device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt operations:
5-volt Read
5-volt Erase
5-volt Program
Fast Program operation:
Word-by-Word programming: 50 µS (max.)
Fast Erase operation: 100 mS (typ.)
Fast Read access time: 40/45 nS
Endurance: 10K cycles (typ.)
Ten-year data retention
Hardware data protection
8K word Boot Block with Lockout protection
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20 µA (typ.)
Automatic program and erase timing with
internal VPP generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 40-pin TSOP and 44-pin
PLCC
Publication Release Date: October 2000
- 1 - Revision A3




Winbond

W49F102 Datasheet Preview

W49F102 Datasheet

64K x 16 CMOS FLASH MEMORY

No Preview Available !

W49F102
PIN CONFIGURATIONS
A9
A10
A11
A12
A13
A14
A15
NC
WE
VDD
NC
CE
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40-pin
TSOP
40 Vss
39 A8
38 A7
37 A6
36 A5
35 A4
34 A3
33 A2
32 A1
31 A0
30 OE
29 DQ0
28 DQ1
27 DQ2
26 DQ3
25 DQ4
24 DQ5
23 DQ6
22 DQ7
21 Vss
DDD/
V/
AA
Q Q Q C N N D WN 1 1
13 14 15 E C C D E C 5 4
DQ12
DQ11
DQ10
DQ9
DQ8
Vss
NC
DQ7
DQ6
DQ5
DQ4
6 5 4 3 2 1 44 43 42 41 40
7 39
8 38
9 37
10 36
11 44-pin 35
12
PLCC
34
13 33
14 32
15 31
16 30
17 29
18 19 20 21 22 23 24 25 26 27 28
A13
A12
A11
A10
A9
Vss
NC
A8
A7
A6
A5
D DDD / N A A A A A
Q QQQ O C 0 1 2 3 4
3210 E
BLOCK DIAGRAM
VDD
VSS
CE
OE CONTROL
WE
OUTPUT
BUFFER
DQ0
.
.
DQ15
A0
.
DECODER
.
A15
MAIN
MEMORY
(56K Words)
BootBlock
(8K Words)
PIN DESCRIPTION
SYMBOL
A0 - A15
DQ0 - DQ15
CE
OE
WE
VDD
Vss
NC
PIN NAME
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Write Enable
Power Supply
Ground
No Connection
-2-


Part Number W49F102
Description 64K x 16 CMOS FLASH MEMORY
Maker Winbond
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W49F102 Datasheet PDF






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