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W49F201 - 128K X 16 CMOS FLASH MEMORY

This page provides the datasheet information for the W49F201, a member of the W49F 128K X 16 CMOS FLASH MEMORY family.

Datasheet Summary

Description

The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits.

The device can be programmed and erased in-system with a standard 5V power supply.

A 12-volt VPP is not required.

Features

  • Single 5-volt operations:.
  • 5-volt Read/Erase/Program Fast Program operation:.
  • Word-by-Word programming: 50 µS (max. ) Fast Erase operation: 60 mS (typ. ) Fast Read access time: 45/55 nS Endurance: 1K/10K cycles (typ. ) Ten-year data retention Hardware data protection Sector configuration.
  • One 8K words boot block with lockout protection.
  • Two 8K words parameter blocks.
  • One 104K words (208K bytes) Main Memory Array Blocks.
  • Low power co.

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Datasheet preview – W49F201

Datasheet Details

Part number W49F201
Manufacturer Winbond
File Size 267.48 KB
Description 128K X 16 CMOS FLASH MEMORY
Datasheet download datasheet W49F201 Datasheet
Additional preview pages of the W49F201 datasheet.

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Full PDF Text Transcription

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Preliminary W49F201 128K × 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F201 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers. FEATURES • Single 5-volt operations: − 5-volt Read/Erase/Program Fast Program operation: − Word-by-Word programming: 50 µS (max.) Fast Erase operation: 60 mS (typ.) Fast Read access time: 45/55 nS Endurance: 1K/10K cycles (typ.
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