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W981216BH - 2M x 4 BANKS x 16-BIT SDRAM

Description

2M words × 4 banks × 16 bits.

Using pipelined architecture and 0.175 µm process technology, W981216BH delivers a data bandwidth of up to 143M words per second (-7).

Features

  • 3.3V ±0.3V Power Supply.
  • Up to 143 MHz Clock Frequency.
  • 2,097,152 Words × 4 banks × 16 bits organization.
  • Auto Refresh and Self Refresh.
  • CAS Latency: 2 and 3.
  • Burst Length: 1, 2, 4, 8, and full page.
  • Burst Read, Single Writes Mode.
  • Byte Data Controlled by DQM.
  • Power-Down Mode.
  • Auto-precharge and Controlled Precharge.
  • 4K Refresh cycles / 64 mS.
  • Interface: LVTTL.
  • Packaged in TSOP I.

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Datasheet preview – W981216BH

Datasheet Details

Part number W981216BH
Manufacturer Winbond
File Size 1.28 MB
Description 2M x 4 BANKS x 16-BIT SDRAM
Datasheet download datasheet W981216BH Datasheet
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Full PDF Text Transcription

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W981216BH GENERAL DESCRIPTION 2M × 4 BANKS × 16 BIT SDRAM W981216BH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 µm process technology, W981216BH delivers a data bandwidth of up to 143M words per second (-7). To fully comply with the personal computer industrial standard, W981216BH is sorted into three speed grades: -7, -75 and 8H. The -7 is compliant to the 143 MHz/CL3 or PC133/CL2 specification, the -75 is compliant to the PC133/CL3 specification, the -8H is compliant to the PC100/CL2 specification Accesses to the SDRAM are burst oriented.
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