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W986416DH - 1M x 4 BANKS x 16-BITS SDRAM

General Description

W986416DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits.

Using pipelined architecture and 0.175 µm process technology, W986416DH delivers a data bandwidth of up to 366M bytes per second (-55).

Key Features

  • 3.3V ±0.3V power supply.
  • 1048576 words × 4 banks × 16 bits organization.
  • Self Refresh Current: Standard and Low Power.
  • CAS latency: 2 and 3.
  • Burst Length: 1, 2, 4, 8, and full page.
  • Sequential and Interleave burst.
  • Burst read, single write operation.
  • Byte data controlled by DQM.
  • Power-down Mode.
  • Auto-precharge and controlled precharge.
  • 4K refresh cycles/64 mS.
  • Interface: LVTTL.
  • P.

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Datasheet Details

Part number W986416DH
Manufacturer Winbond
File Size 1.55 MB
Description 1M x 4 BANKS x 16-BITS SDRAM
Datasheet download datasheet W986416DH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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W986416DH GENERAL DESCRIPTION 1M × 4 BANKS × 16 BITS SDRAM W986416DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 µm process technology, W986416DH delivers a data bandwidth of up to 366M bytes per second (-55). For different application, W986416DH is sorted into the following speed grades: –55, -6, -7. The -55 parts can run up to 183 MHz/CL3. The -6 parts can run up to 166 MHz/CL3. The -7 parts can run up to 143 MHz/CL3. For handheld device application, we also provide a low power option, the grade of –7L, with Self Refresh Current under 400 µA and work well at 2.7V during Self Refresh Mode. Accesses to the SDRAM are burst oriented.