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W986416DH Datasheet Preview

W986416DH Datasheet

1M x 4 BANKS x 16-BITS SDRAM

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W986416DH
GENERAL DESCRIPTION
1M × 4 BANKS × 16 BITS SDRAM
W986416DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
1M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 µm process technology,
W986416DH delivers a data bandwidth of up to 366M bytes per second (-55). For different application,
W986416DH is sorted into the following speed grades: –55, -6, -7. The -55 parts can run up to 183
MHz/CL3. The -6 parts can run up to 166 MHz/CL3. The -7 parts can run up to 143 MHz/CL3. For
handheld device application, we also provide a low power option, the grade of –7L, with Self Refresh
Current under 400 µA and work well at 2.7V during Self Refresh Mode.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W986416DH is ideal for main memory in
high performance applications.
FEATURES
3.3V ±0.3V power supply
1048576 words × 4 banks × 16 bits organization
Self Refresh Current: Standard and Low Power
CAS latency: 2 and 3
Burst Length: 1, 2, 4, 8, and full page
Sequential and Interleave burst
Burst read, single write operation
Byte data controlled by DQM
Power-down Mode
Auto-precharge and controlled precharge
4K refresh cycles/64 mS
Interface: LVTTL
Packaged in TSOP II 54-pin, 400 mil - 0.80
AVAILABLE PART NUMBER
PART NUMBER SPEED (CL = 3)
W986416DH-55
W986416DH-6
W986416DH-7
W986416DH-7L
183 MHz
166 MHz
143 MHz
143 MHz
SELF REFRESH
CURRENT (MAX.)
1 mA
1 mA
1 mA
400 µA
POWER SUPPLY FOR
SELF REFRESH MODE
3.0V - 3.6V
3.0V - 3.6V
3.0V - 3.6V
2.7V - 3.6V
Publication Release Date: June 2001
- 1 - Revision A2




Winbond

W986416DH Datasheet Preview

W986416DH Datasheet

1M x 4 BANKS x 16-BITS SDRAM

No Preview Available !

PIN CONFIGURATION
V CC
DQ0
V CC Q
DQ1
DQ2
V SS Q
DQ3
DQ4
V CC Q
DQ5
DQ6
V SS Q
DQ7
V CC
LDQM
WE
CAS
RAS
CS
BS0
BS1
A10/AP
A0
A1
A2
A3
V CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
W986416DH
54 VSS
53 DQ15
52 VSSQ
51 DQ14
50 DQ13
49 V CC Q
48 DQ12
47 DQ11
46 VSSQ
45 DQ10
44 DQ9
43 VCC Q
42 DQ8
41 VSS
40 NC
39 UDQM
38 CLK
37 CKE
36 NC
35 A11
34 A9
33 A8
32 A7
31 A6
30 A5
29 A4
28 VSS
-2-


Part Number W986416DH
Description 1M x 4 BANKS x 16-BITS SDRAM
Maker Winbond
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