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PFF4N65F - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 12.4 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 2.2 Ω (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFF4N65F
Manufacturer Wing On
File Size 833.32 KB
Description N-Channel MOSFET
Datasheet download datasheet PFF4N65F Datasheet

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Full PDF Text Transcription

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PFP4N65F / PFF4N65F FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 12.4 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.2 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. PFP4N65F / PFF4N65F 650V N-Channel MOSFET BVDSS = 650 V RDS(on) = 2.2 Ω ID = 4.0 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.
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