N-Channel Super Junction MOSFET
New technology for high voltage device
Low RDS(ON) and low conduction losses Small package
BVDSS = 650 V
Ultra low gate charge cause lower driving requirement 100% avalanche tested
RDS(on) = 0.35 Ω
RoHS
ID = 11 A
Drain
Gate
.
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PFP65R380 / PFF65R380
PFP65R380 / PFF65R380
FEATURES
N-Channel Super Junction MOSFET
New technology for high voltage device
Low RDS(ON) and low conduction losses Small package
BVDSS = 650 V
Ultra low gate charge cause lower driving requirement 100% avalanche tested
RDS(on) = 0.35 Ω
RoHS
ID = 11 A
Drain
Gate
●
◀▲
● ●
Source
APPLICATION
PFC(Power Factor Correction) SMPS(Switched Mode Power Supplies) UPS(Uninterruptible Power Supplies)
TO-220
TO-220F
1 2 3
1.Gate 2. Drain 3. Source
12 3
1.Gate 2. Drain 3.
PFP65R380 Datasheet
