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PFP65T360 Datasheet - Wing On

PFP65T360 - N-Channel Super Junction MOSFET

PFP65T360 Features

*  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested  RoHS BVDSS = 650 V RDS(on) = 0.30 Ω ID = 11.0 A Drain  Gate 

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*  Source TO-220 TO-220F APPLICATIO

PFP65T360-WingOn.pdf