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D2499 - SILICON DIFFUSED POWER TRANSISTOR

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SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PM CONDITIONS VBE = 0V MIN VCESM VCEO IC

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Datasheet Details

Part number D2499
Manufacturer Wing Shing Computer
File Size 127.83 KB
Description SILICON DIFFUSED POWER TRANSISTOR
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www.DataSheet4U.com 2SD2499 GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PM CONDITIONS VBE = 0V MIN VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 4.0A; IB = 0.8A f = 16KHz IF = 4.0A ICsat = 4.0A; f = 16KHz 1.5 MAX 1500 600 5 10 50 5 2.0 1.
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