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D1911 - 2SD1911

Description

Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PFM CONDITIONS VBE = 0V TYP VCESM VCEO IC

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Part number D1911
Manufacturer Wing Shing Computer Components
File Size 100.54 KB
Description 2SD1911
Datasheet download datasheet D1911 Datasheet

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2SD1911 GENERAL DESCRIPTION Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PFM CONDITIONS VBE = 0V TYP VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 4.0A; IB = 0.8A f = 16KHz IF = 4.5A ICsat = 4.0A; f = 16KHz 4.5 1.6 MAX 1500 600 5 10 50 5 2.0 1.
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