Datasheet Details
| Part number | D716 |
|---|---|
| Manufacturer | Wing Shing Computer Components |
| File Size | 120.48 KB |
| Description | 2SD716 |
| Download | D716 Download (PDF) |
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| Part number | D716 |
|---|---|
| Manufacturer | Wing Shing Computer Components |
| File Size | 120.48 KB |
| Description | 2SD716 |
| Download | D716 Download (PDF) |
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SILICON EPITAXIAL PLANAR TRANSISTOR Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose www.DataSheet4U.com QUICK REFERENCE DATA SYMBOL TO-3P(I)D CONDITIONS VBE = 0V MIN VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 3.0A;
IB = 0.3A IF = 3.0A 1.5 MAX 100 100 6 60 2 2.0 - UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 100 100 5 6 1.5 60 150 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB=100V VEB=5V IC=1mA IC = 3.0A;
IB = 0.3A IC = 1A;
2SD716 GENERAL.
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