Description
SILICON EPITAXIAL PLANAR TRANSISTOR
Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose
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QUICK REFERENCE DATA
SYMBOL
TO-3P(I)D
CONDITIONS VBE = 0V MIN
VCESM VCEO IC ICM Ptot VCEsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltag
D716 Datasheet
