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2SD1407
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT
SC-67
!
Complement to 2SB1016
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -100 -100 -5 -3 25 150 -50~150 Unit V V V A W
℃ ℃
ELECTRICAL CHARACTERISTICS (TA=25℃)
Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO IEBO hFE1 VCE(sat) fT Test Condition VCB= -150V , IE=0 VEB= -5V , IC=0 VCE= -5.0V ,IC=-1.0A IC=-4A ,IB=-0.4mA VCE= -10V ,IC=-0.
D1407 Datasheet
